Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale-Reference-Cited by-同舟云学术

Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale

Published:2002-11 Issue:2 Volume:96 Page:115-131
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Soukiassian P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Silicon Carbide Electronic Devices and Materials, Materials Research Society Bulletin, vol. 22, March 1997, and references therein.

2. IEEE Transactions on Electron Devices, special issue on Silicon Carbide Electronic Devices 46 (1999) and references therein.

3. J. Bouix, M.P. Berthet, F. Bosselet, R. Favre, M. Peronnet, J.C. Viala, C. Vincent, H. Vincent, in: Surface and Interfaces of Advances Materials, J. Phys. IV (7) (1997) C6–C191.

4. Electron spectroscopy study of SiC

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