Dopant diffusion control by adding carbon into Si and SiGe: principles and device application-Reference-Cited by-同舟云学术

Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

Published:2001-12 Issue:3 Volume:87 Page:262-270
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Osten H.J,Knoll D,Rücker H

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

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3. H.J. Osten, G. Lippert, D. Knoll, R. Barth, B. Heinemann, H. Rücker, P. Schley, Techn. Digest IEDM97 (1997) 803.

4. L.D. Lanzarotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee, Techn. Digest IEDM96 (1996) 249.

5. D. Knoll, B. Heinemann, H.J. Osten, K.E. Ehwald, B. Tillack, P. Schley, R. Barth, M. Matthes, K.S. Park, Y. Kim, W. Winkler, Techn. Digest IEDM98 (1998) 703.

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2. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures;Microelectronic Engineering;2014-08

3. CVD growth of Ge films on graded Si 1-x Ge x : C buffers;SPIE Proceedings;2008-02-29

4. Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon;Defect and Diffusion Forum;2005-04

5. Effect of Carbon on Diffusion of Boron in SiGe between 940 – 1050 °C;MRS Proceedings;2004