Full wafer non-contact mapping of electrical properties of ultra-thin advanced dielectrics on Si-Reference-Cited by-同舟云学术

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Full wafer non-contact mapping of electrical properties of ultra-thin advanced dielectrics on Si

Published:2002-04 Issue: Volume:91-92 Page:211-215
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Edelman Piotr,Lagowski Jacek,Savtchouk Alexandre,Wilson Marshall,Aleynikov Andrey,Marinskiy Dmitriy,Navarro Joaquin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Characterization and Metrology for ULSI Technology: 2000 International Conference;Huff,2001

2. Characterization and Metrology for ULSI Technology: 2000 International Conference;Richter,2001

3. Characterization and Metrology for ULSI Technology: 2000 International Conference;Wilson,2001

4. High electric fields in silicon dioxide produced by corona charging

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-contact C-V measurements of ultra thin dielectrics;The European Physical Journal Applied Physics;2004-07

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