Scanning spreading resistance microscopy of aluminum implanted 4H–SiC-Reference-Cited by-同舟云学术

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Scanning spreading resistance microscopy of aluminum implanted 4H–SiC

Published:2003-09 Issue:1-3 Volume:102 Page:128-131
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Osterman J.,Abtin L.,Zimmermann U.,Janson M.S.,Anand S.,Hallin C.,Hallén A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Nitrogen-implanted SiC diodes using high-temperature implantation

2. The effects of N+ dose in implantation into 6h-sic epilayers

3. p-Type doping of SiC by high dose Al implantation—problems and progress

4. Activation of ion implanted dopants in α‐SiC

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy;Solid State Phenomena;2024-08-21

2. Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications;Journal of Electronic Materials;2015-11-03

3. Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-09

4. Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy;Thin Solid Films;2006-10

5. Annealing of Al implanted 4H silicon carbide;Physica Scripta;2006-08-17

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