Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations-Reference-Cited by-同舟云学术

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Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

Published:1997-01 Issue:1-3 Volume:43 Page:154-156
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Middleton P.G.,Trager-Cowan C.,O'Donnell K.P.,Cheng T.S.,Hooper S.E.,Foxon C.T.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

3. W. Van Der Stricht, I. Moerman, P. Demeester, J.A. Crawley, E.J. Thrush, P.G. Middleton, C. Trager-Cowan, K.P. O'Donnell, to be published.

4. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

5. High‐quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of GaN films on unconventional oxide substrates;J. Mater. Chem. C;2014

2. Growth of epitaxial GaN on LiGaO2 substrates via a reaction with ammonia;Journal of Materials Research;2001-07

3. Metalorganic Vapor Phase Epitaxy of GaN on LiGaO2 Substrates Using Tertiarybutylhydrazine;physica status solidi (a);2001-03

4. Effect of Externally-Imposed Radial Strain on the Piezoelectric Response of MOCVD-Grown Gallium Nitride;MRS Proceedings;2000

5. Electrical and structural characterization of AlxGa1−xN/GaN heterostructures grown on LiGaO2 substrates;Applied Physics Letters;1999-05-31

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