Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides-Reference-Cited by-同舟云学术

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Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides

Published:1997-02 Issue:1-3 Volume:44 Page:117-120
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rao E.V.K.,Allovon M.,Rafle Y.,Juhel M.,Thibierge H.,Theys B.,Chevallier J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Donor neutralization in GaAs(Si) by atomic hydrogen

2. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

3. Optical waveguides formed by deuterium passivation of acceptors in Si dopedp‐type GaAs epilayers

4. Hydrogen passivation of shallow acceptors in p-type InP

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical and Experimental Investigation of InP/InGaAsP Asymmetric Twin-Waveguide;IEEE Photonics Technology Letters;2023-12-15

2. All-optical wavelength conversion in SOA-based Mach–Zehnder interferometer with monolithically integrated loss-coupled DFB laser diode;Semiconductor Science and Technology;2004-02-19

3. Interaction of Hydrogen with Impurities and Defects in Semiconductors;Solid State Phenomena;2001-12

4. Hydrogenation of buried passive sections in photonic integrated circuits: a tool to improve propagation losses at ∼1.56 μm;Materials Science and Engineering: B;1999-12

5. A significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation;IEEE Photonics Technology Letters;1998-03

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