EBIC study on the electrical activity of stacking faults in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Gettering of Copper to Oxidation Induced Stacking Faults in Silicon
2. Deep levels associated with oxidation induced stacking faults inn‐type silicon
3. Gettering of copper by bulk stacking faults and punched‐out dislocations in Czochralski‐grown silicon
4. The electrical properties of stacking faults and precipitates in heat‐treated dislocation‐free Czochralski silicon
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