Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates-Reference-Cited by-同舟云学术

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Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates

Published:1997-02 Issue:1-3 Volume:44 Page:392-394
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Müller S.G.,Eckstein R.,Hofmann D.,Schmitt E.,Schoierer W.,Winnacker A.,Dorsch W.,Strunk H.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Single crystal growth of SiC substrate material for blue light emitting diodes

2. Electrical and optical characterization of SiC

3. Observations of the influence of stress fields on the shape of growth and dissolution spirals

4. Capillary equilibria of dislocated crystals

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simple and quick enhancement of SiC bulk crystal growth using a newly developed crucible material;Applied Physics Express;2016-04-19

2. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04

3. Defects in SiC substrates and epitaxial layers affecting semiconductor device performance;The European Physical Journal Applied Physics;2004-07

4. Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification;Japanese Journal of Applied Physics;2003-09-15

5. Nondestructive defect delineation in SiC wafers based on an optical stress technique;Applied Physics Letters;2002-05-06

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