Temperature gradient controlled SiC crystal growth
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. Proc. ICSCRM-95;Anikin,1996
3. Growth of bulk SiC
4. Formation of macrodefects in SiC
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