Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon-Reference-Cited by-同舟云学术

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Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon

Published:2003-05 Issue: Volume:102-103 Page:156-161
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kimura T.,Isshiki H.,Ishida T.,Shimizu T.,Ide S.,Saito R.,Yugo S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference16 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

3. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

4. Room‐temperature electroluminescence from Er‐doped crystalline Si

5. Erbium in oxygen‐doped silicon: Electroluminescence

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Erbium–silicon–oxide nano-crystallite waveguide formation based on nano-porous silicon;Optical Materials;2005-02

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