Dislocation-related luminescence in Er-implanted silicon-Reference-Cited by-同舟云学术

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Dislocation-related luminescence in Er-implanted silicon

Published:1998-12 Issue:1-4 Volume:80 Page:357-361
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sobolev N.A.,Gusev O.B.,Shek E.I.,Vdovin V.I.,Yugova T.G.,Emel'yanov A.M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference7 articles.

1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

2. Dislocation-related electroluminescence at room temperature in plastically deformed silicon

3. Time‐resolved D‐band luminescence in strain‐relieved SiGe/Si

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling light emission by engineering atomic geometries in silicon photonics;Optics Letters;2020-03-17

2. Photoluminescence associated with {113} defects in oxygen‐implanted silicon;physica status solidi (a);2017-06-07

3. Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals;Acta Physica Polonica A;2011-07

4. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence;Semiconductors;2010-01

5. Formation and photoluminescence characteristics of Er-related nanostructures on Si(001) substrate covered with an ultrathin SiO2 film;Surface Science;2008-07

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