Damage induced by pions in silicon detectors-Reference-Cited by-同舟云学术

Damage induced by pions in silicon detectors

Published:1995-11 Issue:1-3 Volume:44 Page:510-519
ISSN:0920-5632
Container-title:Nuclear Physics B - Proceedings Supplements
language:en
Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Bates S.J.,Furetta C.,Glaser M.,Lemeilleur F.,Soave C.,León-Florián E.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference14 articles.

1. Non-ionizing energy deposition in silicon for radiation damage studies;Van Ginneken;Fermi Lab. internal report FN-522,1989

2. Hadron fluxes in inner parts of LHC detectors;Aarnio;Nucl. Instrum. Methods,1993

3. Pion induced displacement damage in silicon devices;Huhtinen;Nucl. Instrum. Methods,1993

4. C. Furetta, S.J. Bates, M. Glaser et al., CERN Detector R&D Collaboration RD2, "Fluence and dosimetric measurements for a π± irradiation facility", these proceedings.

5. Damage observed in silicon diodes after low energy pion irradiation;Aarnio;CMS TN/94-274,1994

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1. Annealing of radiation-induced defects in silicon in a simplified phenomenological model;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-10

2. Epitaxial silicon carbide charge particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-11

3. Neutron and photon contamination near π+ beam during irradiation of silicon detectors;Il Nuovo Cimento A;1996-09