Transport and recombination properties of group-III doped SiCNTs-Reference-Cited by-同舟云学术

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Transport and recombination properties of group-III doped SiCNTs

Published:2021-04 Issue: Volume:128 Page:114578
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Gong Pei,Yang Ying-Ying,Ma Wan-Duo,Fang Xiao-Yong,Jing Xi-Li,Jia Ya-Hui,Cao Mao-Sheng

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Silicon carbide and silicon carbide-based structures

2. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

3. SiC materials-progress, status, and potential roadblocks

4. SiC microwave power technologies

5. Thermoluminescence dosimetric properties of silicon carbide (SiC) used in industrial applications

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