Designs of photoabsorption-enhanced variable Al component GaN nanostructure for UV photodetectors-Reference-Cited by-同舟云学术

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Designs of photoabsorption-enhanced variable Al component GaN nanostructure for UV photodetectors

Published:2021-02 Issue: Volume:126 Page:114496
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Lv Zhisheng,Liu Lei,Zhangyang Xingyue,Sun Yan,Lu Feifei,Tian Jian

Funder

Qing Lan Project

Six Talent Peaks Project in Jiangsu Province-China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: current and voltage dependence;Kudryashov;Semiconductors,2001

2. Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers;Kuo;Appl. Phys. Lett.,2012

3. Processing defects and devices;Pearton;J. Appl. Phys.,1999

4. Gallium clusters Gan (n = 1-6): structures, thermochemistry, and electron affinities;Zhao;ChemInform,2004

5. Synthesis of GaN:ZnO Solid Solution by Solution Combustion Method and Characterization for Photocatalytic Application;Menon,2016

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1. Two-photon absorption in quantum dots with Hellmann potential;Physica Scripta;2024-05-24

2. Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction;IEEE Electron Device Letters;2024-04

3. Effect of window layer with different growth modes on the photoelectric properties of AlGaInP LED;AIP Advances;2023-02-01

4. Air‐Stabilized Lead‐Free Hexagonal Cs ₃ Bi ₂ I ₉ Nanocrystals for Ultrahigh‐Performance Optical Detection;Advanced Functional Materials;2022-05-06

5. Study on the evolution from α-GaOOH to α-Ga₂O₃ and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃ heterojunction;CrystEngComm;2022

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