Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (311)B and (100) GaAs substrates and coated with gold nanoparticles-Reference-Cited by-同舟云学术

Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (311)B and (100) GaAs substrates and coated with gold nanoparticles

Published:2013-12 Issue: Volume:54 Page:233-236
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Khatab A.,Lemine O.M.,Alkaoud A.,Falamas A.,Aziz M.,Gobato Y. Galvão,Henini M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Surface plasmon-enhanced photoluminescence from a single quantum well

2. Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

3. Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure

4. Temperature dependence of the surface plasmon coupling with an InGaN∕GaN quantum well

5. Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

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