Ballistic transport in InSb quantum wells at high temperature-Reference-Cited by-同舟云学术

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Ballistic transport in InSb quantum wells at high temperature

Published:2004-01 Issue:3-4 Volume:20 Page:251-254
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Goel N,Chung S.J,Santos M.B,Suzuki K,Miyashita S,Hirayama Y

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Electronic analog of the electro‐optic modulator

3. Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor

4. Spin-interference device

5. Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic and optical properties of InSb quantum dots from pseudopotential calculation;Chinese Journal of Physics;2020-08

2. Phonon and Polaron properties in InSb spherical quantum dots;Chinese Journal of Physics;2020-06

3. Mid-infrared light-emitting diodes;Mid-infrared Optoelectronics;2020

4. Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys;Infrared Physics & Technology;2015-07

5. Room temperature ballistic transport in InSb quantum well nanodevices;Applied Physics Letters;2011-12-12

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