Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures-Reference-Cited by-同舟云学术

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Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures

Published:2010-09 Issue:10 Volume:42 Page:2622-2627
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Granger G.,Kam A.,Studenikin S.A.,Sachrajda A.S.,Aers G.C.,Williams R.L.,Poole P.J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Spins in few-electron quantum dots

2. Driven coherent oscillations of a single electron spin in a quantum dot

3. Hyperfine-Mediated Gate-Driven Electron Spin Resonance

4. Electrically driven single-electron spin resonance in a slanting Zeeman field

5. A Triple Quantum Dot in a Single-Wall Carbon Nanotube

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of optical gain in compressively strained InAsP/GaInAs based quantum well heterostructure for short wavelength infrared applications;Physica B: Condensed Matter;2024-03

2. Nonlinear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs;Physical Review B;2012-09-05

3. Few-electron quantum dots in InGaAs quantum wells: Role of fluctuations;Applied Physics Letters;2011-03-28

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