Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Breakdown voltage improvement for thin-film SOI power MOSFET's by a buried oxide step structure
2. A New Partial-SOI LDMOSFET With Modified Electric Field for Breakdown Voltage Improvement
3. New thin-film power MOSFETs with a buried oxide double step structure
4. Study of novel techniques for reducing self-heating effects in SOI power LDMOS
5. A new structure of SOI MOSFET for reducing self-heating effect
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