Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn δ-layer-Reference-Cited by-同舟云学术

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Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn δ-layer

Published:2009-02 Issue:4 Volume:41 Page:652-654
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Zaitsev S.V.,Kulakovskii V.D.,Dorokhin M.V.,Danilov Yu. A.,Demina P.B.,Sapozhnikov M.V.,Vikhrova O.V.,Zvonkov B.N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Spintronics: Fundamentals and applications

2. Making Nonmagnetic Semiconductors Ferromagnetic

3. Theory of ferromagnetic (III,Mn)V semiconductors

4. Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

5. High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnδDoping

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures;Physical Review B;2021-09-23

2. The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures;Semiconductors;2018-10-18

3. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties;Technical Physics;2017-09

4. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn;Semiconductors;2016-11

5. PECULIARITIES OF MANIFESTATION OF SPIN-DEPENDENT EFFECTS IN THE FERROMAGNETIC QUANTUM CONFINED GaAs STRUCTURES;Physics, Chemistry and Applications of Nanostructures;2013-06

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