A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs)
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
2. AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
3. Undoped AlGaN/GaN HEMTs for microwave power amplification
4. DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration
5. p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
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1. Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure;Indian Journal of Physics;2023-09-11
2. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs;Journal of Semiconductors;2023-08-01
3. Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode;Journal of Nanophotonics;2023-05-23
4. Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes;2023-03-01
5. Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2021-12
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