The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films-Reference-Cited by-同舟云学术

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The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Published:2009-03 Issue:5 Volume:41 Page:812-816
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Li D.X.,He Y.,Feng J.Y.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing

2. The effect of selenization and post-annealing on the photoluminescence property of porous silicon

3. Quantum confinement and light emission in SiO2/Si superlattices

4. Stimulated emission in nanocrystalline silicon superlattices

5. Optical gain in silicon nanocrystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intense violet and blue light emission from Si nanowires fabricated via solid–liquid–solid growth from amorphous Si films;Applied Physics Express;2015-07-16

2. Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures;Semiconductor Physics Quantum Electronics and Optoelectronics;2014-11-10

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