Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots-Reference-Cited by-同舟云学术

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Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots

Published:2004-03 Issue:2-4 Volume:21 Page:501-505
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Osborn K.D,W. Keller Mark,Mirin R.P

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Turnstile device for heralded single photons: Coulomb blockade of electron and hole tunneling in quantum confinedp-i-nheterojunctions

2. A single-photon turnstile device

3. Electrically Driven Single-Photon Source

4. H. Grabert, M.H. Devoret (Eds.), Single Charge Tunneling, Plenum Press, New York, 1992.

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3. AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS;Nano;2010-04

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