Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes-Reference-Cited by-同舟云学术

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Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes

Published:2004-03 Issue:2-4 Volume:21 Page:732-736
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ohtani N,Kishimoto K,Kubota K,Saravanan S,Sato Y,Nashima S,Vaccaro P,Aida T,Hosoda M

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. V.Ya. Prinz, et al., Proceedings of the 26th International Symposium on Compound Semiconductors, Berlin, Germany, 1999, p. 199.

2. Photoluminescence of GaAs/AlGaAs micro-tubes containing uniaxially strained quantum wells

3. Photoluminescence property of uniaxial strained GaAs/AlGaAs quantum wells contained in a micro-tube

4. Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs

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