Conductance anisotropy of high-mobility two-dimensional hole gas at GaAs/(Al,Ga)As()A single heterojunctions-Reference-Cited by-同舟云学术

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Conductance anisotropy of high-mobility two-dimensional hole gas at GaAs/(Al,Ga)As()A single heterojunctions

Published:2004-03 Issue:2-4 Volume:21 Page:737-741
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Hey R,Friedland K.J,Kostial H,Ploog K.H

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. The growth and physics of ultra-high-mobility two-dimensional hole gas on (311) A GaAs surface

2. Fabrication of high mobilityin situback-gated (311)A hole gas heterojunctions

3. Low-field magnetoresistance in GaAs two-dimensional holes

4. Reconstruction of the GaAs (311)Asurface

5. Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acoustic Carrier Transport in GaAs Nanowires;Topics in Applied Physics;2013-09-28

2. Mechanism of non-classical light emission from acoustically populated (311)A GaAs quantum wires;New Journal of Physics;2012-01-06

3. Acoustically-driven Single Photon Sources on (311)A GaAs;AIP Conference Proceedings;2011

4. Photon anti-bunching in acoustically pumped quantum dots;Nature Photonics;2009-10-25

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