Growth of Ge islands on prepatterned Si (001) substrates-Reference-Cited by-同舟云学术

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Growth of Ge islands on prepatterned Si (001) substrates

Published:2004-07 Issue:3-4 Volume:23 Page:243-247
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Zhong Zhenyang,Halilovic A,Lichtenberger H,Schäffler F,Bauer G

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface

2. Lithographic positioning of self-assembled Ge islands on Si(001)

3. Luminescence of laterally ordered Ge islands along 〈100〉 directions

4. Regimented placement of self-assembled Ge dots on selectively grown Si mesas

5. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy;Applied Surface Science;2018-04

2. Advance in the Growth of Ordered Ge/Si Quantum Dots;Applied Mechanics and Materials;2013-05

3. Patterns in Ge cluster growth on clean and oxidized Si(111)-(7×7) surfaces;Surface Science;2012-05

4. Recent developments in Ge dots grown on pit-patterned surfaces;physica status solidi (b);2012-02-20

5. A Combined In Situ Grazing Incidence Small Angle X-Ray Scattering and Grazing Incidence X-Ray Diffraction Study of the Growth of Ge Islands on Pit-Patterned Si(001) Substrates;Journal of Nanoscience and Nanotechnology;2011-10-01

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