Carrier diffusion on atomically flat () GaAs quantum wells-Reference-Cited by-同舟云学术

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Carrier diffusion on atomically flat () GaAs quantum wells

Published:2004-03 Issue:2-4 Volume:21 Page:689-692
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Oh Ji-Won,Yoshita Masahiro,Itoh Hirotake,Akiyama Hidefumi,N. Pfeiffer Loren,W. West Ken

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Formation of a high quality two‐dimensional electron gas on cleaved GaAs

2. Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth

3. Quantum wells with atomically smooth interfaces

4. Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

5. Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth;Journal of Applied Physics;2004-12

2. Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization;Progress in Nano-Electro-Optics IV

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