InGaAsSb negative luminescent devices with built-in cavities emitting at-Reference-Cited by-同舟云学术

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InGaAsSb negative luminescent devices with built-in cavities emitting at

Published:2004-01 Issue:3-4 Volume:20 Page:548-552
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Remennyi M.A.,Matveev B.A.,Zotova N.V.,Karandashev S.A.,M. Stus’ N.,Talalakin G.N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Negative luminescence at 3.9 µm in InGaAsSb-based diodes

2. B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remennyi, N.M. Stus’, G.N. Talalakin, Towards longwave (5–6μm) LED operation at 80°C : injection or extraction of carriers? IEE Proc., Optoelectronics 149 (2002) 33.

3. Current crowding in InAsSb light-emitting diodes

4. Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?

5. InAs and InAsSb LEDs with built-in cavities

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