1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. III-Nitride Semiconductor Materials;Feng,2006
3. M.A. Green, in: Proceedings of the Fourth IEEE World Conference on Photovoltaic Energy Conversion, Waikoloa, USA, Piscataway, NJ, 2006, p. 15.
4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
5. A. Luque, A. Martí, P. Wahnon, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Könenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios, N. López, in: Proceedings of the 29th IEEE PVSC, New Orleans, LA, 2002, p. 1190.