Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Modeled tunnel currents for high dielectric constant dielectrics
2. Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics
3. Single- and multi-wall carbon nanotube field-effect transistors
4. Room-temperature transistor based on a single carbon nanotube
5. Physics of Semiconductor Devices;Sze,1981
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