Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector-Reference-Cited by-同舟云学术

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Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Published:2008-01 Issue:3 Volume:40 Page:633-636
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wang Zhicheng,Chen Yonghai,Xu Bo,Liu Fengqi,Shi Liwei,Tang Chenguang,Wang Zhanguo

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. The theory of quantum-dot infrared phototransistors

2. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

3. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors

4. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

5. Characteristics of InGaAs quantum dot infrared photodetectors

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1. Hydrostatic and biaxial strain effect on electronic properties of (In,Ga)As capped InAs/GaAs (113)A quantum dots;2024-02-01

2. Review of Polarization Optical Devices Based on Graphene Materials;International Journal of Molecular Sciences;2020-02-26

3. Graphene-based polarization-sensitive longwave infrared photodetector;Nanotechnology;2019-08-13

4. Review of Quantum Dot-in-a-Well Infrared Photodetectors and Prospect of New Structures;Journal of Nanoscience and Nanotechnology;2016-08-01

5. Investigation on the polarized bound-to-continuum intersub-band transitions in the mid-infrared region for InAs quantum dots;Physica B: Condensed Matter;2015-06

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