Influence of image charges on the impurity-related optical properties of near-surface quantum wells under a transverse electric field-Reference-Cited by-同舟云学术

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Influence of image charges on the impurity-related optical properties of near-surface quantum wells under a transverse electric field

Published:2019-09 Issue: Volume:113 Page:115-120
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Vartanian A.L.,Asatryan A.L.,Vardanyan L.A.

Funder

Science Committee of the Ministry of Education and Science of Armenia

Armenian National Science and Education Fund (ANSEF)

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells

2. Surface quantum wells

3. High-power passively mode-locked semiconductor lasers

4. Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of impurity position and doping concentration on the binding energies and total optical absorption coefficients in a $${\delta }$$-doped quantum well;The European Physical Journal Plus;2021-04

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