Monolayer MoS2 thermoelectric properties engineering via strain effect-Reference-Cited by-同舟云学术

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Monolayer MoS2 thermoelectric properties engineering via strain effect

Published:2019-05 Issue: Volume:109 Page:248-252
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Xiang Junxiang,Ali Rai Nauman,Yang Yongfei,Zheng Zhou,Xiang Bin,Cui Xudong

Funder

National Natural Science Foundation

China Academy of Engineering Physics

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Thin-film thermoelectric devices with high room-temperature figures of merit;Venkatasubramanian;Nature,2001

2. Recent developments in semiconductor thermoelectric Physics and materials;Shakouri;Annu. Rev. Mater. Res.,2011

3. Practical limits to thermoelectric figure of merit .2;Ure;Energy Convers.,1972

4. Complex thermoelectric materials;Snyder;Nat. Mater.,2008

5. Doping effects on the thermoelectric properties of pristine poly(3,4-ethylenedioxythiophene);Zhang;RSC Adv.,2015

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