Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures-Reference-Cited by-同舟云学术

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Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures

Published:2006-06 Issue:1 Volume:33 Page:201-206
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Feng Yuan Ping,Xu Xin,Spector Harold N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

2. Observation of the excited level of excitons in GaAs quantum wells

3. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures

4. Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

5. Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1−xAsmultilayer structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hidden symmetry and excitonic transitions in the quantum well;Physica E: Low-dimensional Systems and Nanostructures;2008-01

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