Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias-Reference-Cited by-同舟云学术

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Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Published:2024-08 Issue: Volume:162 Page:116009
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Kheirabadi Narjes^ORCID

Publisher

Elsevier BV

Reference20 articles.

1. Topological current divider in a chern insulator junction;Ovchinnikov;Nature Commun.,2022

2. Fictitious gauge fields in bilayer graphene;Mariani;Phys. Rev. B,2012

3. Energy spectrum of graphene multilayers in a parallel magnetic field;Pershoguba;Phys. Rev. B,2010

4. Bilayer graphene with parallel magnetic field and twisting: phases and phase transitions in a highly tunable dirac system;Roy;Phys. Rev. B,2013

5. Transport properties of bilayer graphene in a strong in-plane magnetic field;Van der Donck;Phys. Rev. B,2016

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