Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors-Reference-Cited by-同舟云学术

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Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

Published:2008-04 Issue:6 Volume:40 Page:2160-2162
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Son S.H.,Kang M.G.,Hwang S.W.,Lee J.I.,Park Y.J.,Yu Y.S.,Ahn D.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

2. L.J. Micheel, A.H. Taddiken, A.C. Seabaugh, in: Proceedings of the 23rd IEEE International Symposium, Multiple-Valued Logic, 164, 1993.

3. A Novel SET/MOSFET Hybrid Static Memory Cell Design

4. RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits

5. Gate bias controlled NDR in an in-plane-gate quantum dot transistor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET;Silicon;2020-11-27

2. Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures;Japanese Journal of Applied Physics;2010-10-20

3. Growth of nanostructures by locally modified surface reactivity;Materials Science in Semiconductor Processing;2009-02

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