Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates-Reference-Cited by-同舟云学术

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Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

Published:2006-05 Issue:1-2 Volume:32 Page:21-24
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Atkinson P.,Ward M.B.,Bremner S.P.,Anderson D.,Farrow T.,Jones G.A.C.,Shields A.J.,Ritchie D.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Quantum dots as a photon source for passive quantum key encoding

2. A scheme for efficient quantum computation with linear optics

3. Quantum Information Processing Using Quantum Dot Spins and Cavity QED

4. Critical layer thickness for self-assembled InAs islands on GaAs

5. In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition

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1. Techniques for epitaxial site-selective growth of quantum dots;Journal of Vacuum Science & Technology A;2021-01

2. Size calibration of epitaxial islands via a two-step growth protocol: Kinetic Monte Carlo and effective-medium theory study;Surface Science;2015-07

3. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate;Nanotechnology;2014-10-23

4. Fabrication of polymer/ZnS nanoparticle composites by matrix-mediated synthesis;Reactive and Functional Polymers;2014-06

5. High quality factor GaAs-based photonic crystal microcavities by epitaxial re-growth;Optics Express;2013-12-13

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