Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition x-Reference-Cited by-同舟云学术

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Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition x

Published:2006-05 Issue:1-2 Volume:32 Page:230-233
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Gozu Shin-ichiro,Akahane Kouichi,Yamamoto Naokatsu,Ueta Akio,Ohtani Naoki

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy

2. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

3. InGaAs-AlAsSb quantum cascade structures emitting at 3.1 [micro sign]m

4. Pump-probe measurement of ultrafast all-optical modulation based on intersubband transition in n-doped quantum wells

5. Empirical fit to band discontinuities and barrier heights in III–V alloy systems

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer;Physica E: Low-dimensional Systems and Nanostructures;2011-02

2. Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinement;Journal of Crystal Growth;2007-04

3. Alloying effect in the III-As–Sb ternary systems;Materials Science and Engineering: B;2007-02

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