Edge effects on the contact resistance of side-bonded contacts to heavily n-doped silicon nanowires-Reference-Cited by-同舟云学术

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Edge effects on the contact resistance of side-bonded contacts to heavily n-doped silicon nanowires

Published:2021-06 Issue: Volume:130 Page:114669
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Shukkoor Anvar Abdul,Karmalkar Shreepad

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. GaN nanowire MOSFET with near-ideal subthreshold slope;Li;IEEE Electron. Device Lett.,2018

2. Toward intraoperative detection of disseminated tumor cells in lymph nodes with silicon nanowire field effect transistors;Tran;ACS Nano,2016

3. A transmission line method for evaluation of vertical InAs nanowire contacts;Berg;Appl. Phys. Lett.,2015

4. High-performance vertical gate-all-around silicon nanowire FET with high- κ/metal gate;Zhai;IEEE Trans. Electron. Dev.,2014

5. Size-dependent effects on electrical contacts to nanotubes and nanowires;Léonard;Phys. Rev. Lett.,2006

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