Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices-Reference-Cited by-同舟云学术

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Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices

Published:2014-08 Issue: Volume:54 Page:234-240
ISSN:0263-2241
Container-title:Measurement
language:en
Short-container-title:Measurement

Author:

Chiquet Philippe,Masson Pascal,Postel-Pellerin Jérémy,Laffont Romain,Micolau Gilles,Lalande Frédéric,Regnier Arnaud

Publisher

Elsevier BV

Subject

Applied Mathematics,Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. Analysis and modeling of floating-gate EEPROM cells;Kolodny;IEEE Trans. Electron Dev.,1986

2. Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage;Postel-Pellerin;J. Non-Cryst. Solids,2007

3. Physics of Semiconductor Devices;Sze,1981

4. A complete model of E2PROM memory cells for circuit simulations;Pavan;IEEE Trans. Comput. Aided Des. Integr. Circ. Syst.,2003

5. Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress;Plossu;J. Non-Cryst. Solids,2001

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stability Evaluation of Concrete Structure Considering the Local Damage Using Nondestructive Detection and Numerical Analysis;IOP Conference Series: Earth and Environmental Science;2020-02-01

2. Secondary bonding networks in small (HgS)n clusters: A theoretical investigation;Computational and Theoretical Chemistry;2015-05

3. Editorial;Measurement;2014-08

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