Subject
Applied Mathematics,Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Marketsandmarkets.com, Millimeter Wave Technology Market by Product, Frequency Band, License Type, Application, and Geography – Global Forecast to 2023, , Jul. 2017 [Apr. 06, 2018].
2. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices;Mohanbabu;Superlattices Microstruct.,2017
3. C. Andrei, R. Doerner, S. A. Chevtchenko, W. Heinrich, M. Rudolph, On the optimization of GaN HEMT layout for highly rugged low-noise amplifier design, in: Proc. EuMIC, Nuremberg, Germany, 2017, pp. 244–247.
4. Influence on noise performance of GaN HEMTs with in situ and low-pressure-chemical-vapor-deposition SiNx passivation;Huang;IEEE Trans. Electron Devices,2016
5. Microwave effects of UV light exposure of a GaN HEMT: measurements and model extraction;Caddemi;Microelectron. Reliab.,2016
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献