Migration and assembly of transition metal atoms implanted in sapphire with a high dose-Reference-Cited by-同舟云学术

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Migration and assembly of transition metal atoms implanted in sapphire with a high dose

Published:2000-05 Issue: Volume:166-167 Page:887-891
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kobayashi Tomohiro,Terai Takayuki

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Properties of metallic ions implanted into sapphire

2. Electrical property of high-fluence nickel-implanted single crystal alumina

3. Preparation of nanometer-size dispersions of iron in sapphire by ion implantation and annealing

4. Self-assembled two-dimensional distribution of nanoparticles with high-current Cu− implantation into insulators

5. A method of calculating the integral breadths of Debye-Scherrer lines: generalization to non-cubic crystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Evolution of Co Nano-crystallites in Co-Implanted and Annealed Sapphire;Transactions of the Materials Research Society of Japan;2011

2. XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5mol% H2/Ar) atmosphere;Applied Surface Science;2008-12

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