Matrix effects in SIMS analysis of high-dose boron implanted silicon wafers-Reference-Cited by-同舟云学术

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Matrix effects in SIMS analysis of high-dose boron implanted silicon wafers

Published:1998-01 Issue:1 Volume:134 Page:121-125
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yamazaki Hideyuki

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Quantitative secondary ion mass spectrometry: A review

2. Ultra shallow doping profiling with SIMS

3. Quantitative analysis using sputtered neutrals in a secondary ion microanalyser

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2. Tungsten diffusion in silicon;Journal of Applied Physics;2014-01-07

3. Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy;Materials Science and Engineering: B;2009-02

4. Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method;Applied Surface Science;2008-12

5. Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy;Journal of Applied Physics;2006

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