Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient
2. Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications
3. Oxynitride gate dielectric grown in nitric oxide (NO): the effect of reoxidation on dielectric reliability of the active edge
4. The application of nitrogen ion implantation in silicon technology
5. Reliability of gate oxide grown on nitrogen‐implanted Si substrates
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. XPS study of nanoscale SiOxNylayers synthezised by plasma immersion implantation of nitrogen;Journal of Physics: Conference Series;2014-05-15
2. Structural studies of silicon oxynitride layers formed by low energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
3. Specific features of steady-state implantation of crystalline silicon with a molecular oxygen-nitrogen beam: Si L 2, 3 x-ray emission spectra;Physics of the Solid State;2008-01
4. Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report);Pure and Applied Chemistry;2004-01-01
5. Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3