Experimental investigation of Ostwald ripening in an implanted system-Reference-Cited by-同舟云学术

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Experimental investigation of Ostwald ripening in an implanted system

Published:1999-01 Issue:1-2 Volume:149 Page:99-107
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Weber R.,Skorupa W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference34 articles.

1. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

2. A transmission electron microscope investigation of the dose dependence of the microstructure of silicon‐on‐insulator structures formed by nitrogen implantation of silicon

3. Al‐Based Precipitate Evolution during High Temperature Annealing of Al Implanted in Si

4. Ion beam synthesis of cobalt silicide: effect of implantation temperature

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ostwald Ripening in Materials Processing;Materials Processing Handbook;2007-03-28

2. Microstructural evolution of low-dose separation by implanted oxygen materials implanted at 65 and 100 keV;Journal of Materials Research;2003-09

3. Charge Transport Dynamics and Redox Induced Structural Changes within Solid Deposits of a Ruthenium Dimer;Langmuir;2002-11-12

4. Microstructural Evolution and Defects in Ultra-thin SIMOX Materials during Annealing;MRS Proceedings;2002

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