Comparison of boron diffusivity during rapid thermal annealing in predamaged, preamorphized and crystalline silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Beam-Solid Interactions and Transient Processes;Michel,1986
2. Anomalous Enhanced Diffusion and Electrical Activation of Boron in Silicon After Rapid Isothermal Annealing
3. Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron-implanted silicon
4. Semiconductor Silicon 1986;Solmi,1986
5. On Thermoluminescence in Conductive Semiconductors
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1. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997
2. Diffusion Modeling of Ion Implanted Boron in Si during RTA: Correlation of Extended Defect Formation and Annealing with the Enhanced Diffusion of Boron;Journal of The Electrochemical Society;1993-01-01
3. Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon;Japanese Journal of Applied Physics;1992-05-15
4. Influence of implant condition on the transient‐enhanced diffusion of ion‐implanted boron in silicon;Journal of Applied Physics;1992-03-15
5. Boron ion implantation through Mo and Mo silicide layers for shallow junction formation;Journal of Applied Physics;1991-04
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