Ar and B low-energy implants into a vicinal silicon surface: A molecular dynamics study-Reference-Cited by-同舟云学术

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Ar and B low-energy implants into a vicinal silicon surface: A molecular dynamics study

Published:2001-10 Issue:3-4 Volume:183 Page:251-259
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mazzone A.M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Long-range channelling in low energy ion implantation into silicon

2. Molecular Dynamics Simulations of Low-Energy Ion/Surface Interactions During Vapor Phase Crystal Growth: 10 eV Si Incident on Si(001)2×1

3. Characteristics of sub-keV atom-Si(111) surface collisions

4. Simulation of the influence of energetic atoms on Si homoepitaxial growth

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and sputtering effects of medium energy ion bombardment of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-09

2. Effect of surface steps on sputtering and surface defect formation: molecular-dynamics study of 5 keV Xe+ bombardment of Pt(111) at glancing incidence angles;Surface Science;2003-12

3. Results of Molecular Dynamics Calculations;Topics in Applied Physics

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