Crystallisation of Ge nanoclusters in SiO2 caused by electron irradiation in TEM
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Y.-C. King, T.-J. King, C. Hu, in: International Electron Devices Meeting Technical Digest, San Francisco, 1998, p. 115
2. Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
3. Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation
4. In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers
5. Fabrication and analysis of the nanometer-sized structure of silicon by ultrahigh vacuum field emission transmission electron microscope
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