Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Detection of Vacancy Distributions by Decoration with Hydrogen;ECS Transactions;2009-09-25
2. Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation;MRS Proceedings;2008
3. Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon;Materials Science and Engineering B;2003-09-15
4. Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step;Journal of The Electrochemical Society;2003
5. Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon;Applied Physics Letters;2002-09-02
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