Scanning μ-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films-Reference-Cited by-同舟云学术

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Scanning μ-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films

Published:2001-06 Issue:1 Volume:179 Page:121-125
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Winzell Thomas,Pejnefors Johan,Elfman Mikael,Östling Mikael,Whitlow Harry J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

2. A. Chantre, M. Marty, J.L. Regolini, M. Mouis, J. de-Pontcharra, D. Dutartre, C. Morin, D. Gloria, S. Jouan, R. Pantel, M. Laurens, A. Monroy, in: Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, 1998, p. 93

3. Selective versus non-selective growth of Si and SiGe

4. Pattern sensitivity of selective Si1−xGex chemical vapor deposition: Pressure dependence

5. Local Loading Effect in Selective Silicon Epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

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