Influence of extended structural defects on the effective carrier concentration of p-type Hg0.78Cd0.22Te implanted with aluminium ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
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2. Modeling of junction formation and drive-in in ion implanted HgCdTe
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4. A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions
5. F. Wooten, Optical Properties of Solids, Academic Press, New York, 1972, p. 52
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1. Be ion irradiation induced p- to n-type conversion in HgCdTe;Journal of Applied Physics;2007-06
2. Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature;Journal of Applied Physics;2002-11-15
3. An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
4. Ar-implanted epitaxially grown HgCdTe: evaluation of structural damage by RBS and TEM;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
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